| PART |
Description |
Maker |
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXYH20N120C3D1 |
High-Speed IGBT for 20-50 kHz Switching
|
IXYS Corporation
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| RJH6086BDPK RJH6086BDPK-15 |
600 V - 45 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| FGH40N120AN |
High speed switching
1200V NPT IGBT
|
Fairchild Semiconductor
|
| RJH60F4DPK11 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F0DPK10 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP30H2DPK-M0 |
Silicon N Channel IGBT High speed power switching
|
Renesas Electronics Corporation
|
| IGW50N65F5 |
650V IGBT high speed switching series fifth generation
|
Infineon Technologies A...
|
| RJH60F6BDPQ-A0 |
600V - 45A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH6088BDPK |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
